| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 2 |
| Weight | 2.084002g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Pin Count | 2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 90W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 90W |
| Case Connection | DRAIN |
| Turn On Delay Time | 95 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| Rise Time | 1μs |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 820 ns |
| Turn-Off Delay Time | 800 ns |
| Continuous Drain Current (ID) | -100A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.009Ohm |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 340 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 5.08mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |