| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Terminal Form | WIRE |
| Base Part Number | BAV20 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 0.4W |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 150V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Case Connection | ISOLATED |
| Forward Current | 250mA |
| Operating Temperature - Junction | 175°C Max |
| Current - Average Rectified (Io) | 250mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 150V |
| Average Rectified Current | 250mA |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Capacitance @ Vr, F | 5pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 9A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |