BAS116LP3-7
| Parameters | |
|---|---|
| Max Repetitive Reverse Voltage (Vrrm) | 85V |
| Capacitance @ Vr, F | 3pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Recovery Time | 120 ns |
| Height | 645μm |
| Length | 650μm |
| Width | 345μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 19 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 0201 (0603 Metric) |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Power Rating | 250mW |
| Max Power Dissipation | 250mW |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAS116 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10nA @ 75V |
| Voltage - Forward (Vf) (Max) @ If | 1.35V @ 150mA |
| Forward Current | 215mA |
| Operating Temperature - Junction | -65°C~150°C |
| Max Surge Current | 4A |
| Current - Average Rectified (Io) | 215mA DC |
| Forward Voltage | 1.15V |
| Max Reverse Voltage (DC) | 85V |
| Average Rectified Current | 215mA |
| Reverse Recovery Time | 3 μs |
| Peak Reverse Current | 500nA |
See Relate Datesheet