| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IRGS4062DPBF |
| Rise Time-Max | 41ns |
| Input Type | Standard |
| Power - Max | 246W |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 102ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 59A |
| Power Dissipation-Max (Abs) | 246W |
| Test Condition | 400V, 24A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.77V @ 15V, 24A |
| IGBT Type | Trench |
| Gate Charge | 77nC |
| Current - Collector Pulsed (Icm) | 72A |
| Td (on/off) @ 25°C | 19ns/90ns |
| Switching Energy | 532μJ (on), 311μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 40ns |
| RoHS Status | ROHS3 Compliant |