AUIRGP35B60PD-E
| Parameters | |
|---|---|
| IGBT Type | NPT |
| Gate Charge | 55nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 26ns/110ns |
| Switching Energy | 220μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 16ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 308W |
| Number of Elements | 1 |
| Rise Time-Max | 11ns |
| Element Configuration | Single |
| Power Dissipation | 308W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.55V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 42 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.15V |
| Turn On Time | 34 ns |
| Test Condition | 390V, 22A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 142 ns |
See Relate Datesheet