| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 370W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 370W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.6m Ω @ 160A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 240A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Rise Time | 80ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 64 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 240A |
| Contact Plating | Tin |
| JEDEC-95 Code | TO-263CB |
| Mount | Surface Mount |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0026Ohm |
| Drain to Source Breakdown Voltage | 75V |
| Mounting Type | Surface Mount |
| Avalanche Energy Rating (Eas) | 320 mJ |
| Height | 4.83mm |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| Number of Pins | 7 |
| RoHS Status | ROHS3 Compliant |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |