| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 13mOhm |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 70W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 70W |
| Case Connection | DRAIN |
| Turn On Delay Time | 35 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 35A, 10V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 70A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
| Rise Time | 430ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 500 ns |
| Turn-Off Delay Time | 420 ns |
| Continuous Drain Current (ID) | 70A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 280A |
| Height | 1.5mm |
| Length | 6.5mm |
| Width | 7.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 18 hours ago) |
| Mounting Type | Surface Mount |
| Package / Case | ATPAK (2 leads+tab) |
| Surface Mount | YES |