ATP102-TL-H
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Rise Time | 135ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 185 ns |
| Turn-Off Delay Time | 135 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Avalanche Energy Rating (Eas) | 58 mJ |
| Height | 1.5mm |
| Length | 6.5mm |
| Width | 7.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | ATPAK (2 leads+tab) |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 18.5mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 40W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 40W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18.5m Ω @ 20A, 10V |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 10V |
See Relate Datesheet