| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Mount | Surface Mount |
| Package / Case | 0505 (1412 Metric) |
| Number of Pins | 4 |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | GOLD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET RF Small Signal |
| Voltage - Rated DC | 3V |
| Max Power Dissipation | 360mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 120mA |
| Frequency | 2GHz |
| Base Part Number | ATF-541M4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Nominal Supply Current | 60mA |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 3V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | E-pHEMT |
| Continuous Drain Current (ID) | 120mA |
| Gate to Source Voltage (Vgs) | 1V |
| Gain | 17.5dB |
| Drain Current-Max (Abs) (ID) | 0.12A |
| DS Breakdown Voltage-Min | 5V |
| Power - Output | 21.4dBm |
| FET Technology | HIGH ELECTRON MOBILITY |
| Noise Figure | 0.5dB |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |