| Parameters | |
|---|---|
| Package / Case | SC-82A, SOT-343 |
| Surface Mount | YES |
| Transistor Element Material | GALLIUM ARSENIDE |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Voltage - Rated | 5V |
| HTS Code | 8541.21.00.75 |
| Subcategory | FET RF Small Signal |
| Current Rating (Amps) | 120mA |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Frequency | 2GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | ATF-54143 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 60mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | pHEMT FET |
| Gain | 16.6dB |
| Drain Current-Max (Abs) (ID) | 0.12A |
| DS Breakdown Voltage-Min | 5V |
| Power - Output | 20.4dBm |
| FET Technology | HIGH ELECTRON MOBILITY |
| Noise Figure | 0.5dB |
| Voltage - Test | 3V |
| Power Dissipation Ambient-Max | 0.725W |
| RoHS Status | Non-RoHS Compliant |