APTM20UM03FAG
| Parameters | |
|---|---|
| Power Dissipation-Max | 2270W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.27kW |
| Turn On Delay Time | 32 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.6m Ω @ 290A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 15mA |
| Input Capacitance (Ciss) (Max) @ Vds | 43300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 580A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 840nC @ 10V |
| Rise Time | 64ns |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 116 ns |
| Turn-Off Delay Time | 88 ns |
| Continuous Drain Current (ID) | 580A |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 2320A |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 36 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Series | POWER MOS 7® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | R-PUFM-X2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
See Relate Datesheet