APTGT50H60RT3G
| Parameters | |
|---|---|
| Factory Lead Time | 36 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Number of Pins | 32 |
| Published | 1999 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 176W |
| Number of Elements | 1 |
| Configuration | Full Bridge Inverter |
| Input | Single Phase Bridge Rectifier |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 80A |
| Current - Collector Cutoff (Max) | 250μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 3.15nF |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 3.15nF @ 25V |
| VCEsat-Max | 1.9 V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet