APTGT50DU170TG
| Parameters | |
|---|---|
| Configuration | Dual, Common Source |
| Element Configuration | Dual |
| Case Connection | ISOLATED |
| Power - Max | 312W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 75A |
| Current - Collector Cutoff (Max) | 250μA |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Input Capacitance | 4.4nF |
| Turn On Time | 450 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 1100 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 4.4nF @ 25V |
| RoHS Status | RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2006 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 312W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 12 |
| JESD-30 Code | R-XUFM-X12 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
See Relate Datesheet