APTGLQ200H120G
| Parameters | |
|---|---|
| Input Capacitance (Cies) @ Vce | 12.3nF @ 25V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 36 Weeks |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 6 |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1kW |
| Number of Elements | 1 |
| Configuration | Full Bridge |
| Turn On Delay Time | 30 ns |
| Power - Max | 1000W |
| Input | Standard |
| Turn-Off Delay Time | 290 ns |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 350A |
| Current - Collector Cutoff (Max) | 100μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 12.3nF |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 200A |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
See Relate Datesheet