APTGF660U60D4G
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 860A |
| Current - Collector Cutoff (Max) | 500μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 36nF |
| Turn On Time | 343 ns |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 800A |
| Turn Off Time-Nom (toff) | 545 ns |
| IGBT Type | NPT |
| Package / Case | D4 |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 36nF @ 25V |
| RoHS Status | RoHS Compliant |
| Number of Pins | 4 |
| Published | 2012 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2.8kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 2800W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
See Relate Datesheet