APTGF25H120T1G

APTGF25H120T1G

POWER MOD IGBT NPT FULL BRDG SP1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF25H120T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 798
  • Description: POWER MOD IGBT NPT FULL BRDG SP1 (Kg)

Details

Tags

Parameters
Lead Free Lead Free
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.65nF
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Turn Off Time-Nom (toff) 386 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
VCEsat-Max 3.7 V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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