APTC60SKM24T1G
| Parameters | |
|---|---|
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | THROUGH-HOLE |
| Pin Count | 12 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
| Power Dissipation-Max | 462W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 21 ns |
| FET Type | N-Channel |
| Transistor Application | CHOPPER |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 47.5A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 95A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 95A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.024Ohm |
| Pulsed Drain Current-Max (IDM) | 260A |
| DS Breakdown Voltage-Min | 600V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 36 Weeks |
| Contact Plating | Tin |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Number of Pins | 1 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Series | CoolMOS™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
See Relate Datesheet