APT60GT60JR
| Parameters | |
|---|---|
| Part Status | Obsolete |
| Turn Off Time-Nom (toff) | 495 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.6nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 378W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 93A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Collector Emitter Voltage (VCEO) | 600V |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Max Collector Current | 93A |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Current - Collector Cutoff (Max) | 80μA |
| Operating Temperature | -55°C~150°C TJ |
| Published | 1999 |
| Collector Emitter Breakdown Voltage | 600V |
| Series | Thunderbolt IGBT® |
| Input Capacitance | 1.6nF |
| JESD-609 Code | e1 |
| Turn On Time | 84 ns |
| Pbfree Code | yes |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
See Relate Datesheet