APT50GT60BRG

APT50GT60BRG

IGBT 600V 110A 446W TO247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT50GT60BRG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 251
  • Description: IGBT 600V 110A 446W TO247 (Kg)

Details

Tags

Parameters
Test Condition 400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Turn Off Time-Nom (toff) 365 ns
IGBT Type NPT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 14ns/240ns
Switching Energy 995μJ (on), 1070μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 600V
Max Power Dissipation 446W
Current Rating 110A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 46 ns
See Relate Datesheet

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