APT50GR120JD30
| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 days ago) |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4 |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2001 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 417W |
| Number of Elements | 1 |
| Configuration | Single |
| Power - Max | 417W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.2V |
| Max Collector Current | 84A |
| Current - Collector Cutoff (Max) | 1.1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 5.55nF |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 50A |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 30V |
| Input Capacitance (Cies) @ Vce | 5.55nF @ 25V |
See Relate Datesheet