| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Manufacturer Package Identifier | TO-247 (B) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | SiCFET (Silicon Carbide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 273W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 273W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 41A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 41A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 1.2kV |
| Avalanche Energy Rating (Eas) | 2500 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 25.96mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |