 
    | Parameters | |
|---|---|
| Lifecycle Status | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 1 month ago) | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-247-3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tube | 
| Published | 1999 | 
| Series | POWER MOS 7® | 
| JESD-609 Code | e1 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| Terminal Finish | TIN SILVER COPPER | 
| Additional Feature | LOW CONDUCTION LOSS | 
| Voltage - Rated DC | 900V | 
| Max Power Dissipation | 543W | 
| Current Rating | 100A | 
| Pin Count | 3 | 
| JESD-30 Code | R-PSFM-T3 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Case Connection | COLLECTOR | 
| Input Type | Standard | 
| Transistor Application | POWER CONTROL | 
| Polarity/Channel Type | N-CHANNEL | 
| Collector Emitter Voltage (VCEO) | 900V | 
| Max Collector Current | 100A | 
| JEDEC-95 Code | TO-247AD | 
| Collector Emitter Breakdown Voltage | 900V | 
| Turn On Time | 43 ns | 
| Test Condition | 600V, 40A, 5 Ω, 15V | 
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 40A | 
| Turn Off Time-Nom (toff) | 215 ns | 
| IGBT Type | PT | 
| Gate Charge | 145nC | 
| Current - Collector Pulsed (Icm) | 160A | 
| Td (on/off) @ 25°C | 16ns/75ns | 
| Switching Energy | 825μJ (off) | 
| Radiation Hardening | No | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free |