 
    | Parameters | |
|---|---|
| Factory Lead Time | 30 Weeks | 
| Mount | Chassis Mount, Screw | 
| Mounting Type | Chassis Mount | 
| Package / Case | SOT-227-4, miniBLOC | 
| Number of Pins | 4 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Published | 1999 | 
| Series | POWER MOS 7® | 
| JESD-609 Code | e1 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | 
| Subcategory | Insulated Gate BIP Transistors | 
| Voltage - Rated DC | 600V | 
| Max Power Dissipation | 284W | 
| Terminal Position | UPPER | 
| Terminal Form | UNSPECIFIED | 
| Current Rating | 86A | 
| Pin Count | 4 | 
| Number of Elements | 1 | 
| Configuration | Single | 
| Case Connection | ISOLATED | 
| Transistor Application | POWER CONTROL | 
| Polarity/Channel Type | N-CHANNEL | 
| Input | Standard | 
| Collector Emitter Voltage (VCEO) | 600V | 
| Max Collector Current | 86A | 
| Current - Collector Cutoff (Max) | 500μA | 
| Collector Emitter Breakdown Voltage | 600V | 
| Input Capacitance | 4.61nF | 
| Turn On Time | 49 ns | 
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A | 
| Turn Off Time-Nom (toff) | 160 ns | 
| IGBT Type | PT | 
| NTC Thermistor | No | 
| Gate-Emitter Voltage-Max | 30V | 
| Input Capacitance (Cies) @ Vce | 4.61nF @ 25V | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free |