APT13005DI-G1
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Weight | 343.085929mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 25W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A 5V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 1A, 4A |
| Collector Emitter Breakdown Voltage | 450V |
| Current - Collector (Ic) (Max) | 4A |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 900mV |
| Emitter Base Voltage (VEBO) | 9V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet