APT100GN60LDQ4G
| Parameters | |
|---|---|
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 25 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Weight | 10.6g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1999 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 625W |
| Current Rating | 100A |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 229A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Turn On Time | 96 ns |
| Test Condition | 400V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 100A |
| Continuous Collector Current | 229A |
| Turn Off Time-Nom (toff) | 435 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 600nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 31ns/310ns |
| Switching Energy | 4.75mJ (on), 2.675mJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 5.21mm |
| Length | 26.49mm |
| Width | 20.5mm |
See Relate Datesheet