| Parameters | |
|---|---|
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | EEPROMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 5V |
| Terminal Pitch | 1.27mm |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 6A10 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 85°C |
| Supply Voltage-Max (Vsup) | 5.5V |
| Power Supplies | 3/5V |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Min (Vsup) | 2.7V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
| Operating Mode | SYNCHRONOUS |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 6A |
| Supply Current-Max | 0.002mA |
| Operating Temperature - Junction | -55°C~125°C |
| Organization | 1KX16 |
| Memory Width | 16 |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 6A |
| Standby Current-Max | 0.00001A |
| Memory Density | 16384 bit |
| Parallel/Serial | PARALLEL |
| Memory IC Type | EEPROM |
| Serial Bus Type | MICROWIRE |
| Endurance | 1000000 Write/Erase Cycles |
| Write Cycle Time-Max (tWC) | 10ms |
| Data Retention Time-Min | 100 |
| Write Protection | SOFTWARE |
| Alternate Memory Width | 8 |
| Height Seated (Max) | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | R6, Axial |
| Surface Mount | YES |
See Relate Datesheet