3LN01C-TB-E
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 250mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250mW |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.7 Ω @ 80mA, 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 150mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| Rise Time | 65ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 120 ns |
| Turn-Off Delay Time | 155 ns |
| Continuous Drain Current (ID) | 150mA |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 0.15A |
| Height | 1.1mm |
| Length | 2.9mm |
| Width | 1.5mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet