2STW200
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 130W |
| Base Part Number | 2STW |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 25A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 1V |
| hFE Min | 300 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | 25A |
| Height | 24.45mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet