| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.5W |
| Terminal Position | BOTTOM |
| Frequency | 120MHz |
| Base Part Number | 2STL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 1W |
| Power - Max | 1.5W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 3.5A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 120MHz |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 150 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |