| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tray |
| Published | 2007 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 2.5W Ta 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 26.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 430m Ω @ 8A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 46.6nC @ 10V |
| Rise Time | 95ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 58 ns |
| Turn-Off Delay Time | 145 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |