2SD1867TV2
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 3-SIP |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2005 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.0857 |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 80MHz |
| Frequency - Transition | 80MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 1000 |
| VCEsat-Max | 1.5 V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet