2SD1047
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 100W |
| Terminal Position | SINGLE |
| Frequency | 20MHz |
| Base Part Number | 2SD1 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 100W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 20MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 12A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1A 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A |
| Collector Emitter Breakdown Voltage | 140V |
| Transition Frequency | 20MHz |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 50 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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