| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 18V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SC5661 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 1.5 GHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 10mA 10V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 20mA |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 1500MHz |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 56 |
| Continuous Collector Current | 50mA |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1.5pF |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |