2SB1689T106

2SB1689T106

2SB1689T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2SB1689T106
  • Package: SC-70, SOT-323
  • Datasheet: -
  • Stock: 274
  • Description: 2SB1689T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Emitter Base Voltage (VEBO) -5V
hFE Min 270
Continuous Collector Current -1.5A
Height 900μm
Length 2.1mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1689
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 400MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 12V
Max Frequency 100MHz
Transition Frequency 400MHz
Collector Emitter Saturation Voltage -110mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) -15V
See Relate Datesheet

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