2N7002
| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 115mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2N70 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 350mW Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 350mW |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 5V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±18V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 7 ns |
| Continuous Drain Current (ID) | 200mA |
| Threshold Voltage | 2.1V |
| Gate to Source Voltage (Vgs) | 18V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 2.1 V |
| Height | 1.2mm |
| Length | 3.03mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | STripFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet