2N6431
| Parameters | |
|---|---|
| Mount | Through Hole |
| Package / Case | TO-18 |
| Number of Pins | 3 |
| Packaging | Bulk |
| Published | 2001 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Frequency | 50MHz |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation-Max | 500mW |
| Element Configuration | Single |
| Power Dissipation | 1.8W |
| Frequency (Max) | 50MHz |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 50MHz |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 100mA |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 25 |
| DC Current Gain-Min (hFE) | 50 |
| Continuous Collector Current | 450mA |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet