 
    | Parameters | |
|---|---|
| Contact Plating | Tin | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-220-3 | 
| Number of Pins | 2 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 150°C TJ | 
| Packaging | Tube | 
| JESD-609 Code | e3 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Subcategory | Other Transistors | 
| Voltage - Rated DC | 80V | 
| Max Power Dissipation | 65W | 
| Current Rating | 10A | 
| Base Part Number | 2N63 | 
| Pin Count | 3 | 
| JESD-30 Code | R-PSFM-T3 | 
| Number of Elements | 1 | 
| Polarity | NPN | 
| Voltage | 80V | 
| Element Configuration | Single | 
| Current | 10A | 
| Power Dissipation | 65W | 
| Transistor Application | SWITCHING | 
| Transistor Type | NPN - Darlington | 
| Collector Emitter Voltage (VCEO) | 80V | 
| Max Collector Current | 10A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 3V | 
| Current - Collector Cutoff (Max) | 1mA | 
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A | 
| Collector Emitter Breakdown Voltage | 80V | 
| Collector Emitter Saturation Voltage | 2V | 
| Collector Base Voltage (VCBO) | 80V | 
| Emitter Base Voltage (VEBO) | 5V | 
| hFE Min | 100 | 
| VCEsat-Max | 3 V | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |