2N6317
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 90W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Power - Max | 90W |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2.5A 4V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
| Collector Emitter Breakdown Voltage | 60V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet