2N5582
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-MBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 500mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 300MHz |
| Collector Base Voltage (VCBO) | 75V |
| Turn Off Time-Max (toff) | 300ns |
| Turn On Time-Max (ton) | 35ns |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet