2N5301
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Package / Case | TO-3 |
| Transistor Element Material | SILICON |
| Published | 2012 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE |
| Power Dissipation-Max | 200W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 4MHz |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 30A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 4V |
| Frequency - Transition | 4MHz |
| Collector Base Voltage (VCBO) | 40V |
| hFE Min | 15 |
| DC Current Gain-Min (hFE) | 15 |
| RoHS Status | RoHS Compliant |
See Relate Datesheet