Parameters | |
---|---|
Factory Lead Time | 8 Weeks |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2017 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOW NOISE |
HTS Code | 8541.21.00.95 |
Subcategory | FET General Purpose Small Signal |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | O-PBCY-W3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 360mW |
FET Type | P-Channel |
Transistor Application | AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds | 32pF @ 10V |
DS Breakdown Voltage-Min | 20V |
FET Technology | JUNCTION |
Power Dissipation-Max (Abs) | 0.36W |
Feedback Cap-Max (Crss) | 16 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 300mA @ 10V |
Voltage - Cutoff (VGS off) @ Id | 8V @ 10μA |
Voltage - Breakdown (V(BR)GSS) | 20V |
RoHS Status | Non-RoHS Compliant |