2N1613
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Tube |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 75V |
| Max Power Dissipation | 800mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2N16 |
| JESD-30 Code | O-MBCY-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 60MHz |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet