1PS66SB82,115
| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | 1PS66SB82 |
| Pin Count | 6 |
| Number of Elements | 3 |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 200nA @ 1V |
| Voltage - Forward (Vf) (Max) @ If | 700mV @ 30mA |
| Forward Current | 30mA |
| Max Reverse Leakage Current | 200nA |
| Operating Temperature - Junction | 125°C Max |
| Output Current-Max | 0.03A |
| Application | GENERAL PURPOSE |
| Current - Average Rectified (Io) | 30mA DC |
| Forward Voltage | 700mV |
| Max Reverse Voltage (DC) | 15V |
| Average Rectified Current | 30mA |
| Number of Phases | 1 |
| Peak Reverse Current | 200nA |
| Max Repetitive Reverse Voltage (Vrrm) | 15V |
| Diode Configuration | 3 Independent |
| Reverse Test Voltage | 1V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet