1N5817-B
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Number of Pins | 2 |
| Weight | 310.002035mg |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Additional Feature | LOW POWER LOSS, FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 1N5817 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1mA @ 20V |
| Voltage - Forward (Vf) (Max) @ If | 750mV @ 3A |
| Case Connection | ISOLATED |
| Forward Current | 1A |
| Operating Temperature - Junction | -65°C~125°C |
| Output Current-Max | 1A |
| Forward Voltage | 750mV |
| Max Reverse Voltage (DC) | 20V |
| Average Rectified Current | 1A |
| Peak Reverse Current | 1mA |
| Max Repetitive Reverse Voltage (Vrrm) | 20V |
| Capacitance @ Vr, F | 110pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 25A |
| Max Forward Surge Current (Ifsm) | 25A |
| Height | 2.72mm |
| Length | 5.21mm |
| Width | 2.72mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet