1N5407-G
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 1N5407 |
| JESD-30 Code | O-PALF-W2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
| Case Connection | ISOLATED |
| Max Reverse Leakage Current | 5μA |
| Operating Temperature - Junction | -65°C~125°C |
| Max Surge Current | 200A |
| Output Current-Max | 3A |
| Application | GENERAL PURPOSE |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Recovery Time | 2 μs |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet