1N4448TAP
| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver (Sn/Ag) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Max Power Dissipation | 500mW |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 75V |
| Voltage - Forward (Vf) (Max) @ If | 720mV @ 5mA |
| Case Connection | ISOLATED |
| Forward Current | 300mA |
| Max Reverse Leakage Current | 25nA |
| Operating Temperature - Junction | 175°C Max |
| Max Surge Current | 2A |
| Output Current-Max | 0.3A |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 75V |
| Average Rectified Current | 150mA |
| Reverse Recovery Time | 8 ns |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 4pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 2A |
| Max Forward Surge Current (Ifsm) | 2A |
| Recovery Time | 8 ns |
| Height | 1.7mm |
| Length | 3.9mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet