1N4448,133
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Max Power Dissipation | 500mW |
| Terminal Form | WIRE |
| Base Part Number | 1N4448 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 25nA @ 20V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Case Connection | ISOLATED |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 25nA |
| Operating Temperature - Junction | 200°C Max |
| Max Surge Current | 450mA |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 4 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 4pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Recovery Time | 4 ns |
| Radiation Hardening | No |
See Relate Datesheet