1N4153UR-1
| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AA |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1999 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Additional Feature | METALLURGICALLY BONDED |
| HTS Code | 8541.10.00.70 |
| Terminal Position | END |
| Terminal Form | WRAP AROUND |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 50nA @ 50V |
| Case Connection | ISOLATED |
| Forward Current | 150mA |
| Operating Temperature - Junction | -65°C~175°C |
| Output Current-Max | 0.15A |
| Forward Voltage | 880mV |
| Max Reverse Voltage (DC) | 50V |
| Average Rectified Current | 150mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 50nA |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 2A |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet