1HN04CH-TL-W
| Parameters | |
|---|---|
| Fall Time (Typ) | 39 ns |
| Turn-Off Delay Time | 58 ns |
| Continuous Drain Current (ID) | 270mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.27A |
| Drain-source On Resistance-Max | 8Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 600mW |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 140mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 270mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V |
| Rise Time | 7.4ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet